Practical Handbook of Photovoltaics. Fundamentals and by Augustin McEvoy, Tom Markvart, Luis Castaner

By Augustin McEvoy, Tom Markvart, Luis Castaner

As a part of the becoming sustainable and renewable strength move, the layout, manufacture and use of photovoltaic units is expanding in speed and frequency. The Handbook of Photovoltaics may be a 'benchmark' book for these concerned about the layout, manufacture and use of those devices.

The instruction manual covers the rules of sun cellphone functionality, the uncooked fabrics, photovoltaic platforms, criteria, calibration, checking out, economics and case stories.

The editors have assembled a solid of internationally-respected members from and academia.

The file is key interpreting for: Physicists, digital engineers, designers of structures, installers, architects, policy-makers with regards to photovoltaics.

* an intensive replace to the 'benchmark' ebook from a solid of business and educational overseas specialists guarantees firstclass info from a number of stakeholder perspectives
*Covers all issues PV- from rules of sun cells and their uncooked fabrics, to the deploy and layout of complete PV structures, together with criteria, checking out, economics and environmental impacts
* Case reports, functional examples and stories at the most up-to-date advances take the recent version of this remarkable source past an enormous choice of wisdom, into the area of actual global purposes

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By Augustin McEvoy, Tom Markvart, Luis Castaner

As a part of the becoming sustainable and renewable strength move, the layout, manufacture and use of photovoltaic units is expanding in speed and frequency. The Handbook of Photovoltaics may be a 'benchmark' book for these concerned about the layout, manufacture and use of those devices.

The instruction manual covers the rules of sun cellphone functionality, the uncooked fabrics, photovoltaic platforms, criteria, calibration, checking out, economics and case stories.

The editors have assembled a solid of internationally-respected members from and academia.

The file is key interpreting for: Physicists, digital engineers, designers of structures, installers, architects, policy-makers with regards to photovoltaics.

* an intensive replace to the 'benchmark' ebook from a solid of business and educational overseas specialists guarantees firstclass info from a number of stakeholder perspectives
*Covers all issues PV- from rules of sun cells and their uncooked fabrics, to the deploy and layout of complete PV structures, together with criteria, checking out, economics and environmental impacts
* Case reports, functional examples and stories at the most up-to-date advances take the recent version of this remarkable source past an enormous choice of wisdom, into the area of actual global purposes

Show description

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Additional resources for Practical Handbook of Photovoltaics. Fundamentals and Applications

Example text

One of the simplest yet accurate solutions is given in [22] based on the superposition of zero-input and zero-state solutions of the continuity equation with a boundary condition at the surface given by a surface recombination velocity S as follows: J0 5 Ð We Neff 0 D qn2i dx 1 W ðe 1 qn2i Neff ðWe Þ S 0 dx Neff τ ð27Þ where Neff(x) is the effective doping concentration at depth x taking into account the effect of band-gap narrowing. A systematic and general formulation of the several approximations is given in [23].

Electron Devices ED-31 (1989) 553À560. A. A. Lindholm, F. Therez, IEEE Trans. Electron Devices ED-26 (1978) 958. A. M. Swanson, Proc. , Orlando, 1984, pp. 1303À1308. S. Park, A. A. Lindholm, IEEE Trans. Electron Devices ED-33 (1986) 240. [21] N. Rinaldi, Modelling of minority carrier transport in non-uniformly doped silicon regions with asymptotic expansions, IEEE Trans. Electron Devices ED-40 (1993) 2307À2317. [22] R. Alcubilla, J. Pons, L. Castan˜er, Superposition solution for minority carrier current in the emitter of bipolar devices, Solid State Electron.

No recombination occurs in an ideal pÀn junction, but the (small) lightgenerated current produced here can be added to the first Equation (20). Recombination is included in more realistic analytical theories: the original treatment by Sah et al. 2. 2 Uniform Emitter and Base Analytical expressions for the photogenerated and dark saturation current densities for the emitter or base can be obtained if the dopant concentration and all other parameters are assumed constant. To this end, we define ζ5 SL D ð23Þ y 1 5 ðζ 1 1ÞeW =L 1 ðζ 2 1Þe 2W =L ð24Þ y 2 5 ðζ 1 1ÞeW =L 2 ðζ 2 1Þe 2W =L ð25Þ where S is the surface recombination velocity at external surface (front surface in the case of emitter and rear surface in the case of base); W is the widthpof ffiffiffiffiffiffiffithe relevant region (We for the emitter and Wb for the base); and L 5 Dτ is the minority-carrier diffusion length, where τ is the minoritycarrier lifetime and D is the minority-carrier diffusion constant.

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