Nanostructure Semiconductor Optical Amplifiers: Building by Ali Rostami

By Ali Rostami

"Nanostructure Semiconductor Optical Amplifiers" studies all-optical processing equipment presently on hand and offers semiconductor optical amplifiers (SOAs) as a brand new construction block for this goal. The authors speak about the overcomes of excessive frequency operation of SOAs and suggest a brand new all-optical pumping technique for the implementation of semiconductor optical amplifiers.

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By Ali Rostami

"Nanostructure Semiconductor Optical Amplifiers" studies all-optical processing equipment presently on hand and offers semiconductor optical amplifiers (SOAs) as a brand new construction block for this goal. The authors speak about the overcomes of excessive frequency operation of SOAs and suggest a brand new all-optical pumping technique for the implementation of semiconductor optical amplifiers.

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25, 1048–1049 (1989) 52. : Fabrication and performance characteristics of buried-facet optical amplifiers. J. Appl. Phys. 67, 3943–3947 (1990) 53. 5 lm band travelling-wave semiconductor optical amplifier with window facet structure. Electron. Lett. 25, 1241–1242 (1989) 54. : Analysis on dynamic characteristics of semiconductor optical amplifiers with certain facet reflection based on detailed wideband model. Opt. Express 15, 9096–9106 (2007) 55. : Reflection loss of laser mode from tilted end mirror.

27, 1978–1984 (2009) 34. : Gain and intervalence band absorption in quantumwell lasers. IEEE J. Quantum Electron. 20, 745–753 (1984) 35. : Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices. IEEE Photon. Technol. Lett. 13, 541–543 (2001) 36. : Ultra-fast gain recovery and compression due to Auger-assisted relaxation in quantum dot semiconductor optical amplifiers. J. Lightw. Technol. 27, 2530–2536 (2009) 37. : Characteristics of cross-gain wavelength conversion in quantum dot semiconductor optical amplifiers.

In most of practical cases R1 and R2 \ 10-3. Three approaches are commonly used to reduce the facet reflectivity: using an anti-reflection (AR) coating with a very low reflexivity, orienting the cavity at an angle with respect to the output fiber (tilting), or introducing transparent window regions at each face of the device. 3 Anti-Reflection Coating Semiconductor optical amplifiers fabricated using an AR coating with a reflexivity of less than 10-2 can be classified as resonant or traveling-wave TW devices.

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