By Arnaud Denjoy
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Additional info for Introduction a la Theorie des Fonctions de Variables Reelles
In the space charge region. -j e I 29 p-n Junction in Equilibrium: Qualitative of the n-type side and of holes put of the p-type side. In this way, the development of the built-in field brings about a condition of equilibrium in the p-n junction. The built-in electric field 8" corresponds to a gradient -dV/dx of the electrostatic potential Vex), where Vex) is a function of the distance x in the semiconductor. For simplicity, we will make the assumption(1) that the built-in electric field is confined to the space charge region of the ideal abrupt junction we are considering.
And circles (0) indicate free holes; CB and VB mean conduction band and valence band. respectively. 3. Band diagram of nand p-type semiconductors just after contact and before any flow of holes or electrons. The junction is the vertical line separating the nand p regions. cB----------~~~~~--CB z o a: ..... ) W -1 W DISTANCE driven by their respective concentration gradients, takes place. Holes diffuse across the junction and into the n-type side, and electrons diffuse into the p-type side. Considering the diffusion of holes, the diffusing holes enter the n-type side, where they combine with the free electrons present there.
16. Position (schematic) of the Fermi level EF in a degenerate n-type semiconductor. The states occupied by electrons are shown shaded, and the impurity states are not shown. degenerate p-type semiconductor, the Fermi level is below the valence band maximum, and there is a density of free holes in the valence band. We may also discuss the temperature dependence of the Fermi level in a nondegenerate extrinsic semiconductor, (21,23) using an n-type semicond'uctor as an example. We consider first such a semiconductor at 0 K.